Layout strategy of P+ pick-up on the LV nMOST ESD reliability for 0.6μm to 0.18μm CMOS technologies

A multi-finger LV nMOST is often applied to the input/output pads as electrostatic discharge protection (ESD) elements. However, the non-uniform turned-on phenomenon always occurred, i.e. these sub-nMOSTs can't be turned-on simultaneously. The ESD current will be passed through a few turned-on MOSTs. It was due to the R B resistance of parasitic bipolar transistor for each finger transistor in silicon bulk region is quite different. In this paper, the P + pick-up area in source-side influence on the protection components in ESD capability of input/output pads will be investigated for 0.6μm to 0.18μm CMOS technologies. Here, the best stripe number choice of P + pick-up will be carried out the important snapback parameters. We focus on exploring the value of secondary breakdown current (I t2 ) and some physical parameters for the ESD robustness. Hopefully, it does effectively enhance ESD capability to solve the exactly non-uniform turned-on issue.