A 0.6 /spl mu/m CMOS pinned photodiode color imager technology

A 0.6 /spl mu/m CMOS pinned photodiode color imager technology

The world's first submicron pinned photodiode CMOS image sensors have been produced by adding an optimized image sensor module to a 3.3 V, 0.6 /spl mu/m CMOS process. The 4-transistor pixel cells achieve excellent blue response, low dark current, and good dynamic range. A full-color imager with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Guidash, R.M., Lee, T.-H., Lee, P.P.K., Sackett, D.H., Drowley, C.I., Swenson, M.S., Arbaugh, L., Hollstein, R., Shapiro, F., Domer, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cameras
Circuits
CMOS image sensors
CMOS process
CMOS technology
Color
Dark current
Photodiodes
Pixel
Semiconductor device noise
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The world's first submicron pinned photodiode CMOS image sensors have been produced by adding an optimized image sensor module to a 3.3 V, 0.6 /spl mu/m CMOS process. The 4-transistor pixel cells achieve excellent blue response, low dark current, and good dynamic range. A full-color imager with good color reproduction has been produced using this technology.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1997.650533