A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror
We describe the fabrication, modelling and performance of a resonant cavity detector using epitaxial p-type SiGe/Si quantum wells grown over a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to...
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| creator | Carline, R.T. Hope, D.A.O. Nayar, V. Robbins, D.J. Stanaway, M.B. |
| description | We describe the fabrication, modelling and performance of a resonant cavity detector using epitaxial p-type SiGe/Si quantum wells grown over a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to current n-GaAs/AlGaAs detectors at /spl sim/1 V, making it suitable for integration in a monolithic Si-based focal plane array. Ways to improve the design are discussed. |
| doi_str_mv | 10.1109/IEDM.1997.650524 |
| format | Conference Proceeding |
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The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to current n-GaAs/AlGaAs detectors at /spl sim/1 V, making it suitable for integration in a monolithic Si-based focal plane array. Ways to improve the design are discussed.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 9780780341005</identifier><identifier>ISBN: 0780341007</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1997.650524</identifier><language>eng</language><publisher>IEEE</publisher><subject>Detectors ; Fabrication ; Germanium silicon alloys ; Photodetectors ; Reflectivity ; Resonance ; Semiconductor process modeling ; Silicides ; Silicon germanium ; Tungsten</subject><ispartof>International Electron Devices Meeting. 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Ways to improve the design are discussed.</description><subject>Detectors</subject><subject>Fabrication</subject><subject>Germanium silicon alloys</subject><subject>Photodetectors</subject><subject>Reflectivity</subject><subject>Resonance</subject><subject>Semiconductor process modeling</subject><subject>Silicides</subject><subject>Silicon germanium</subject><subject>Tungsten</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>9780780341005</isbn><isbn>0780341007</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkL1uwjAURq3-SE0pe9XJL5Dgm8SxPSJKKRJVBxjYkB3f0FuFBDkhFW8PEpU-6SxHZ_gYewWRAAgzWc7fvxIwRiWFFDLN71iUgixiAWp7z8ZGaXFdloMQ8oFFAoosBgP6iT133a8QqZJGRmw75QOGnkpb89IO1J953Tb7Pzsgp6YKNqDna1rgZE38-NP2rccey74N_NRRs-eWu1Ogq9RRTSV55AcKoQ0v7LGydYfjf47Y5mO-mX3Gq-_FcjZdxaRNHzuJWS5TaZVVGYAS2kPhbC69L5yvMFVGgnOlRF1pYXLnvSu8KXOdWgtOZyP2dssSIu6OgQ42nHe3S7ILA9lUZg</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Carline, R.T.</creator><creator>Hope, D.A.O.</creator><creator>Nayar, V.</creator><creator>Robbins, D.J.</creator><creator>Stanaway, M.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror</title><author>Carline, R.T. ; Hope, D.A.O. ; Nayar, V. ; Robbins, D.J. ; Stanaway, M.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-b5e34525a7a7311708d16ba45dd6bdfe27951bbc5e8f8094bddb6d9c482aa1b83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Detectors</topic><topic>Fabrication</topic><topic>Germanium silicon alloys</topic><topic>Photodetectors</topic><topic>Reflectivity</topic><topic>Resonance</topic><topic>Semiconductor process modeling</topic><topic>Silicides</topic><topic>Silicon germanium</topic><topic>Tungsten</topic><toplevel>online_resources</toplevel><creatorcontrib>Carline, R.T.</creatorcontrib><creatorcontrib>Hope, D.A.O.</creatorcontrib><creatorcontrib>Nayar, V.</creatorcontrib><creatorcontrib>Robbins, D.J.</creatorcontrib><creatorcontrib>Stanaway, M.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Carline, R.T.</au><au>Hope, D.A.O.</au><au>Nayar, V.</au><au>Robbins, D.J.</au><au>Stanaway, M.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror</atitle><btitle>International Electron Devices Meeting. IEDM Technical Digest</btitle><stitle>IEDM</stitle><date>1997</date><risdate>1997</risdate><spage>891</spage><epage>894</epage><pages>891-894</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>9780780341005</isbn><isbn>0780341007</isbn><abstract>We describe the fabrication, modelling and performance of a resonant cavity detector using epitaxial p-type SiGe/Si quantum wells grown over a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to current n-GaAs/AlGaAs detectors at /spl sim/1 V, making it suitable for integration in a monolithic Si-based focal plane array. Ways to improve the design are discussed.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1997.650524</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | International Electron Devices Meeting. IEDM Technical Digest, 1997, p.891-894 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_650524 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Detectors Fabrication Germanium silicon alloys Photodetectors Reflectivity Resonance Semiconductor process modeling Silicides Silicon germanium Tungsten |
| title | A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror |
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