A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror

A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror

We describe the fabrication, modelling and performance of a resonant cavity detector using epitaxial p-type SiGe/Si quantum wells grown over a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to...

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Hauptverfasser: Carline, R.T., Hope, D.A.O., Nayar, V., Robbins, D.J., Stanaway, M.B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Detectors
Fabrication
Germanium silicon alloys
Photodetectors
Reflectivity
Resonance
Semiconductor process modeling
Silicides
Silicon germanium
Tungsten
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Beschreibung
Zusammenfassung:We describe the fabrication, modelling and performance of a resonant cavity detector using epitaxial p-type SiGe/Si quantum wells grown over a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to current n-GaAs/AlGaAs detectors at /spl sim/1 V, making it suitable for integration in a monolithic Si-based focal plane array. Ways to improve the design are discussed.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1997.650524