Reliability Comparison of ISSG Oxide and HTO as Tunnel Dielectric in 3-D-SONOS Applications

The reliability (endurance and retention) of tunnel oxide (grown and deposited oxide) of 3-D-SONOS devices is compared. Devices with grown tunnel oxide show better initial oxide quality, better fresh retention, and more robust endurance characteristics. Both devices show similar cycling degradation...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2013-05, Vol.34 (5), p.620-622
Hauptverfasser:	Qiao, Fengying, Arreghini, Antonio, Blomme, Pieter, Date, Lucien, Van den Bosch, Geert, Pan, Liyang, Xu, Jun, Van Houdt, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D-SONOS Applied sciences Compound structure devices Degradation Electric breakdown Electronics endurance Exact sciences and technology Flash memories Logic gates Loss measurement Reliability retention Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon compounds tunnel oxide
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The reliability (endurance and retention) of tunnel oxide (grown and deposited oxide) of 3-D-SONOS devices is compared. Devices with grown tunnel oxide show better initial oxide quality, better fresh retention, and more robust endurance characteristics. Both devices show similar cycling degradation trend. The worse postcycling retention is due to tunnel oxide degradation leading to a fast initial loss of charge stored in generated tunnel oxide defects and a higher trap-assisted tunneling rate.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2254463