Microwave passive power limiters with MESFETs

Microwave passive power limiters with MESFETs

This paper describes design, fabrication and test of various microwave passive power limiters based on GaAs MESFETs. Transistors are used as devices under DC voltage control as well as self-controlled devices. Different limiters and their characteristics are compared.

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1. Verfasser: Drozdovski, N.V.
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Sprache:eng
Schlagworte:
Detectors
Gallium arsenide
Impedance
MESFETs
Microwave devices
Radio frequency
Schottky barriers
Schottky diodes
Solid state circuits
Voltage
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creator Drozdovski, N.V.
description This paper describes design, fabrication and test of various microwave passive power limiters based on GaAs MESFETs. Transistors are used as devices under DC voltage control as well as self-controlled devices. Different limiters and their characteristics are compared.
doi_str_mv 10.1109/SBMOMO.1997.648785
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identifier ISBN: 0780341651
ispartof 1997 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. 'Linking to the Next Century'. Proceedings, 1997, Vol.2, p.409-412 vol.2
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Detectors
Gallium arsenide
Impedance
MESFETs
Microwave devices
Radio frequency
Schottky barriers
Schottky diodes
Solid state circuits
Voltage
title Microwave passive power limiters with MESFETs
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