Microwave passive power limiters with MESFETs

Microwave passive power limiters with MESFETs

This paper describes design, fabrication and test of various microwave passive power limiters based on GaAs MESFETs. Transistors are used as devices under DC voltage control as well as self-controlled devices. Different limiters and their characteristics are compared.

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Bibliographische Detailangaben
1. Verfasser: Drozdovski, N.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Detectors
Gallium arsenide
Impedance
MESFETs
Microwave devices
Radio frequency
Schottky barriers
Schottky diodes
Solid state circuits
Voltage
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Beschreibung
Zusammenfassung:This paper describes design, fabrication and test of various microwave passive power limiters based on GaAs MESFETs. Transistors are used as devices under DC voltage control as well as self-controlled devices. Different limiters and their characteristics are compared.
DOI:10.1109/SBMOMO.1997.648785