An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology
In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cas...
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| creator | Weber, R. Hurm, V. Massler, H. Weissbrodt, E. Tessmann, A. Leuther, A. Narhi, T. Kallfass, I. |
| description | In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz. |
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The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz.</description><subject>cascode</subject><subject>Current measurement</subject><subject>Gain</subject><subject>grounded coplanar waveguide (GCPW)</subject><subject>H-band (220-325 GHz)</subject><subject>low-noise amplifier (LNA)</subject><subject>metamorphic high electron mobility transistor (mHEMT)</subject><subject>mHEMTs</subject><subject>millimeter-wave monolithic integrated circuit (MMIC)</subject><subject>MMICs</subject><subject>Noise figure</subject><subject>noise figure (NF)</subject><subject>Receivers</subject><isbn>9781467323024</isbn><isbn>1467323020</isbn><isbn>9782874870262</isbn><isbn>2874870285</isbn><isbn>9782874870286</isbn><isbn>2874870269</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FqhDAUAFNKoWXrF_SSHxCSl5jE4yLbdWFlL96XF33ppmgUFcr-fUvb0zCXgXlgWWkdOKudFWDg8delNlaBEqCfWbaun0IIKYVRVr6w4z7xOveYej5MX3ma4kocx3mIIdLCm-ZU8Zi4Knga-UgbjtMy32LH60PT8o26W5qG6eP-yp4CDitl_9yx9v3QVnV-vhxP1f6cRymKLUdjnQ4WyJOzBQhTAPSkoAAvFEIXNEKP5MtSegzao4QgnTcSehP6oHbs7S8bieg6L3HE5X412in78_gNkNNGcQ</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Weber, R.</creator><creator>Hurm, V.</creator><creator>Massler, H.</creator><creator>Weissbrodt, E.</creator><creator>Tessmann, A.</creator><creator>Leuther, A.</creator><creator>Narhi, T.</creator><creator>Kallfass, I.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201210</creationdate><title>An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology</title><author>Weber, R. ; Hurm, V. ; Massler, H. ; Weissbrodt, E. ; Tessmann, A. ; Leuther, A. ; Narhi, T. ; Kallfass, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-a6784f72ebe875206522de3252b03a2cf4a2daeb991baf4ba12f18b612d6fdf3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>cascode</topic><topic>Current measurement</topic><topic>Gain</topic><topic>grounded coplanar waveguide (GCPW)</topic><topic>H-band (220-325 GHz)</topic><topic>low-noise amplifier (LNA)</topic><topic>metamorphic high electron mobility transistor (mHEMT)</topic><topic>mHEMTs</topic><topic>millimeter-wave monolithic integrated circuit (MMIC)</topic><topic>MMICs</topic><topic>Noise figure</topic><topic>noise figure (NF)</topic><topic>Receivers</topic><toplevel>online_resources</toplevel><creatorcontrib>Weber, R.</creatorcontrib><creatorcontrib>Hurm, V.</creatorcontrib><creatorcontrib>Massler, H.</creatorcontrib><creatorcontrib>Weissbrodt, E.</creatorcontrib><creatorcontrib>Tessmann, A.</creatorcontrib><creatorcontrib>Leuther, A.</creatorcontrib><creatorcontrib>Narhi, T.</creatorcontrib><creatorcontrib>Kallfass, I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Weber, R.</au><au>Hurm, V.</au><au>Massler, H.</au><au>Weissbrodt, E.</au><au>Tessmann, A.</au><au>Leuther, A.</au><au>Narhi, T.</au><au>Kallfass, I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology</atitle><btitle>2012 7th European Microwave Integrated Circuit Conference</btitle><stitle>EuMIC</stitle><date>2012-10</date><risdate>2012</risdate><spage>187</spage><epage>190</epage><pages>187-190</pages><isbn>9781467323024</isbn><isbn>1467323020</isbn><eisbn>9782874870262</eisbn><eisbn>2874870285</eisbn><eisbn>9782874870286</eisbn><eisbn>2874870269</eisbn><abstract>In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| ispartof | 2012 7th European Microwave Integrated Circuit Conference, 2012, p.187-190 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | cascode Current measurement Gain grounded coplanar waveguide (GCPW) H-band (220-325 GHz) low-noise amplifier (LNA) metamorphic high electron mobility transistor (mHEMT) mHEMTs millimeter-wave monolithic integrated circuit (MMIC) MMICs Noise figure noise figure (NF) Receivers |
| title | An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology |
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