An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology

In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cas...

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Bibliographische Detailangaben
Hauptverfasser:	Weber, R., Hurm, V., Massler, H., Weissbrodt, E., Tessmann, A., Leuther, A., Narhi, T., Kallfass, I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	cascode Current measurement Gain grounded coplanar waveguide (GCPW) H-band (220-325 GHz) low-noise amplifier (LNA) metamorphic high electron mobility transistor (mHEMT) mHEMTs millimeter-wave monolithic integrated circuit (MMIC) MMICs Noise figure noise figure (NF) Receivers
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Zusammenfassung:	In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz.