Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

A pathway to increase the threshold voltage ( V TH ) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of V TH in p-GaN gate HEMTs. In order to increase the depletion width, w...

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Veröffentlicht in:	IEEE electron device letters 2013-05, Vol.34 (5), p.605-607
Hauptverfasser:	HWANG, Injun, OH, Jaejoon, HYUK SOON CHOI, KIM, Jongseob, CHOI, Hyoji, KIM, Joonyong, CHONG, Soogine, SHIN, Jaikwang, CHUNG, U-In
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Bridge circuits Electronics Exact sciences and technology Gallium nitride Gold HEMTs High-electron-mobility transistor (HEMT) Interfaces Logic gates MODFETs p-GaN bridge p-GaN gate HEMT Schottky contact Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices source-connected p-GaN threshold voltage Transistors
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Zusammenfassung:	A pathway to increase the threshold voltage ( V TH ) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of V TH in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge. We demonstrate that a bridged p-GaN gate HEMT structure increases the V TH from 0.93 to 2.44 V.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2249038