High density ST-MRAM technology (Invited)
We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MR...
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| creator | Slaughter, J. M. Rizzo, N. D. Janesky, J. Whig, R. Mancoff, F. B. Houssameddine, D. Sun, J. J. Aggarwal, S. Nagel, K. Deshpande, S. Alam, S. M. Andre, T. LoPresti, P. |
| description | We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MRAM circuit. |
| doi_str_mv | 10.1109/IEDM.2012.6479128 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6479128</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6479128</ieee_id><sourcerecordid>6479128</sourcerecordid><originalsourceid>FETCH-LOGICAL-c223t-4bba9572628262bc2a55ed70f071eabf8562ff1d29e732358f06030c831ea1183</originalsourceid><addsrcrecordid>eNo1j0tLw0AURq8vsK39AeImS7uYeO-dzGtZarWBBkEruCt5zLSRmkoThPx7C9bF4Vsc-OAA3BLGROge0vljFjMSxzoxjtiewZASbWRiDelzGDApLZDMxwWMnbH_jvESBkhaCnJkr2HYtp-IbJRTA5gs6s02qnzT1l0fva1E9jrNos6X22a_22_66D5tfurOV5MbuAr5rvXj047g_Wm-mi3E8uU5nU2XomSWnUiKInfKsGZ7pCg5V8pXBgMa8nkRrNIcAlXsvJEslQ2oUWJp5VETWTmCu7_f2nu__j7UX_mhX5-S5S_GTkMv</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>High density ST-MRAM technology (Invited)</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Slaughter, J. M. ; Rizzo, N. D. ; Janesky, J. ; Whig, R. ; Mancoff, F. B. ; Houssameddine, D. ; Sun, J. J. ; Aggarwal, S. ; Nagel, K. ; Deshpande, S. ; Alam, S. M. ; Andre, T. ; LoPresti, P.</creator><creatorcontrib>Slaughter, J. M. ; Rizzo, N. D. ; Janesky, J. ; Whig, R. ; Mancoff, F. B. ; Houssameddine, D. ; Sun, J. J. ; Aggarwal, S. ; Nagel, K. ; Deshpande, S. ; Alam, S. M. ; Andre, T. ; LoPresti, P.</creatorcontrib><description>We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MRAM circuit.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 9781467348720</identifier><identifier>ISBN: 1467348724</identifier><identifier>EISSN: 2156-017X</identifier><identifier>EISBN: 1467348716</identifier><identifier>EISBN: 9781467348706</identifier><identifier>EISBN: 1467348708</identifier><identifier>EISBN: 9781467348713</identifier><identifier>DOI: 10.1109/IEDM.2012.6479128</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electric breakdown ; Integrated circuits ; Magnetic tunneling ; Magnetization ; Materials ; Switches ; Transistors</subject><ispartof>2012 International Electron Devices Meeting, 2012, p.29.3.1-29.3.4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c223t-4bba9572628262bc2a55ed70f071eabf8562ff1d29e732358f06030c831ea1183</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6479128$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,782,786,791,792,2060,27932,54927</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6479128$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Slaughter, J. M.</creatorcontrib><creatorcontrib>Rizzo, N. D.</creatorcontrib><creatorcontrib>Janesky, J.</creatorcontrib><creatorcontrib>Whig, R.</creatorcontrib><creatorcontrib>Mancoff, F. B.</creatorcontrib><creatorcontrib>Houssameddine, D.</creatorcontrib><creatorcontrib>Sun, J. J.</creatorcontrib><creatorcontrib>Aggarwal, S.</creatorcontrib><creatorcontrib>Nagel, K.</creatorcontrib><creatorcontrib>Deshpande, S.</creatorcontrib><creatorcontrib>Alam, S. M.</creatorcontrib><creatorcontrib>Andre, T.</creatorcontrib><creatorcontrib>LoPresti, P.</creatorcontrib><title>High density ST-MRAM technology (Invited)</title><title>2012 International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MRAM circuit.</description><subject>Electric breakdown</subject><subject>Integrated circuits</subject><subject>Magnetic tunneling</subject><subject>Magnetization</subject><subject>Materials</subject><subject>Switches</subject><subject>Transistors</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>9781467348720</isbn><isbn>1467348724</isbn><isbn>1467348716</isbn><isbn>9781467348706</isbn><isbn>1467348708</isbn><isbn>9781467348713</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j0tLw0AURq8vsK39AeImS7uYeO-dzGtZarWBBkEruCt5zLSRmkoThPx7C9bF4Vsc-OAA3BLGROge0vljFjMSxzoxjtiewZASbWRiDelzGDApLZDMxwWMnbH_jvESBkhaCnJkr2HYtp-IbJRTA5gs6s02qnzT1l0fva1E9jrNos6X22a_22_66D5tfurOV5MbuAr5rvXj047g_Wm-mi3E8uU5nU2XomSWnUiKInfKsGZ7pCg5V8pXBgMa8nkRrNIcAlXsvJEslQ2oUWJp5VETWTmCu7_f2nu__j7UX_mhX5-S5S_GTkMv</recordid><startdate>201212</startdate><enddate>201212</enddate><creator>Slaughter, J. M.</creator><creator>Rizzo, N. D.</creator><creator>Janesky, J.</creator><creator>Whig, R.</creator><creator>Mancoff, F. B.</creator><creator>Houssameddine, D.</creator><creator>Sun, J. J.</creator><creator>Aggarwal, S.</creator><creator>Nagel, K.</creator><creator>Deshpande, S.</creator><creator>Alam, S. M.</creator><creator>Andre, T.</creator><creator>LoPresti, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201212</creationdate><title>High density ST-MRAM technology (Invited)</title><author>Slaughter, J. M. ; Rizzo, N. D. ; Janesky, J. ; Whig, R. ; Mancoff, F. B. ; Houssameddine, D. ; Sun, J. J. ; Aggarwal, S. ; Nagel, K. ; Deshpande, S. ; Alam, S. M. ; Andre, T. ; LoPresti, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-4bba9572628262bc2a55ed70f071eabf8562ff1d29e732358f06030c831ea1183</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Electric breakdown</topic><topic>Integrated circuits</topic><topic>Magnetic tunneling</topic><topic>Magnetization</topic><topic>Materials</topic><topic>Switches</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Slaughter, J. M.</creatorcontrib><creatorcontrib>Rizzo, N. D.</creatorcontrib><creatorcontrib>Janesky, J.</creatorcontrib><creatorcontrib>Whig, R.</creatorcontrib><creatorcontrib>Mancoff, F. B.</creatorcontrib><creatorcontrib>Houssameddine, D.</creatorcontrib><creatorcontrib>Sun, J. J.</creatorcontrib><creatorcontrib>Aggarwal, S.</creatorcontrib><creatorcontrib>Nagel, K.</creatorcontrib><creatorcontrib>Deshpande, S.</creatorcontrib><creatorcontrib>Alam, S. M.</creatorcontrib><creatorcontrib>Andre, T.</creatorcontrib><creatorcontrib>LoPresti, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Slaughter, J. M.</au><au>Rizzo, N. D.</au><au>Janesky, J.</au><au>Whig, R.</au><au>Mancoff, F. B.</au><au>Houssameddine, D.</au><au>Sun, J. J.</au><au>Aggarwal, S.</au><au>Nagel, K.</au><au>Deshpande, S.</au><au>Alam, S. M.</au><au>Andre, T.</au><au>LoPresti, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High density ST-MRAM technology (Invited)</atitle><btitle>2012 International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>2012-12</date><risdate>2012</risdate><spage>29.3.1</spage><epage>29.3.4</epage><pages>29.3.1-29.3.4</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>9781467348720</isbn><isbn>1467348724</isbn><eisbn>1467348716</eisbn><eisbn>9781467348706</eisbn><eisbn>1467348708</eisbn><eisbn>9781467348713</eisbn><abstract>We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MRAM circuit.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2012.6479128</doi></addata></record> |
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| identifier | ISSN: 0163-1918 |
| ispartof | 2012 International Electron Devices Meeting, 2012, p.29.3.1-29.3.4 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_6479128 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electric breakdown Integrated circuits Magnetic tunneling Magnetization Materials Switches Transistors |
| title | High density ST-MRAM technology (Invited) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T01%3A47%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=High%20density%20ST-MRAM%20technology%20(Invited)&rft.btitle=2012%20International%20Electron%20Devices%20Meeting&rft.au=Slaughter,%20J.%20M.&rft.date=2012-12&rft.spage=29.3.1&rft.epage=29.3.4&rft.pages=29.3.1-29.3.4&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=9781467348720&rft.isbn_list=1467348724&rft_id=info:doi/10.1109/IEDM.2012.6479128&rft_dat=%3Cieee_6IE%3E6479128%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467348716&rft.eisbn_list=9781467348706&rft.eisbn_list=1467348708&rft.eisbn_list=9781467348713&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6479128&rfr_iscdi=true |