High density ST-MRAM technology (Invited)

High density ST-MRAM technology (Invited)

We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MR...

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Hauptverfasser: Slaughter, J. M., Rizzo, N. D., Janesky, J., Whig, R., Mancoff, F. B., Houssameddine, D., Sun, J. J., Aggarwal, S., Nagel, K., Deshpande, S., Alam, S. M., Andre, T., LoPresti, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electric breakdown
Integrated circuits
Magnetic tunneling
Magnetization
Materials
Switches
Transistors
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Beschreibung
Zusammenfassung:We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64Mb, DDR3, ST-MRAM circuit.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6479128