The impact of assist-circuit design for 22nm SRAM and beyond

Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have signi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Karl, E., Zheng Guo, Yong-Gee Ng, Keane, J., Bhattacharya, U., Zhang, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Arrays Circuit stability CMOS integrated circuits Memory management MOS devices Random access memory Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!