The impact of assist-circuit design for 22nm SRAM and beyond

Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have signi...

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Bibliographische Detailangaben
Hauptverfasser: Karl, E., Zheng Guo, Yong-Gee Ng, Keane, J., Bhattacharya, U., Zhang, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have significant impact on process optimization, as well as power consumption, minimum operating voltage and performance of memories.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6479099