The impact of assist-circuit design for 22nm SRAM and beyond
Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have signi...
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| creator | Karl, E. Zheng Guo Yong-Gee Ng Keane, J. Bhattacharya, U. Zhang, K. |
| description | Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have significant impact on process optimization, as well as power consumption, minimum operating voltage and performance of memories. |
| doi_str_mv | 10.1109/IEDM.2012.6479099 |
| format | Conference Proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | 2012 International Electron Devices Meeting, 2012, p.25.1.1-24.1.4 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_6479099 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Arrays Circuit stability CMOS integrated circuits Memory management MOS devices Random access memory Transistors |
| title | The impact of assist-circuit design for 22nm SRAM and beyond |
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