Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO 2 interlayer and nitrogen content in AlON film...

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Hauptverfasser: Hosoi, T., Azumo, S., Kashiwagi, Y., Hosaka, S., Nakamura, R., Mitani, S., Nakano, Y., Asahara, H., Nakamura, T., Kimoto, T., Shimura, T., Watanabe, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectrics
Leakage current
Logic gates
MOSFETs
Oxidation
Silicon
Silicon carbide
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Beschreibung
Zusammenfassung:We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO 2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6478998