Design of RF integrated circuits using SiGe bipolar technology

We report on design aspects and the implementation of RF ICs using TEMIC's SiGe heterojunction bipolar technology. The differences between the device parameters of Si-BJT and SiGe-HBT technology and their influence on IC design are discussed. Design and measurement results of RF ICs, including...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gotzfried, R., Beisswanger, F., Gerlach, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Antenna measurements Bipolar integrated circuits Germanium silicon alloys Heterojunctions Integrated circuit measurements Integrated circuit technology Radio frequency Radiofrequency integrated circuits Silicon germanium Switches
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