Design of RF integrated circuits using SiGe bipolar technology

We report on design aspects and the implementation of RF ICs using TEMIC's SiGe heterojunction bipolar technology. The differences between the device parameters of Si-BJT and SiGe-HBT technology and their influence on IC design are discussed. Design and measurement results of RF ICs, including...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Gotzfried, R., Beisswanger, F., Gerlach, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Antenna measurements Bipolar integrated circuits Germanium silicon alloys Heterojunctions Integrated circuit measurements Integrated circuit technology Radio frequency Radiofrequency integrated circuits Silicon germanium Switches
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We report on design aspects and the implementation of RF ICs using TEMIC's SiGe heterojunction bipolar technology. The differences between the device parameters of Si-BJT and SiGe-HBT technology and their influence on IC design are discussed. Design and measurement results of RF ICs, including low-noise-amplifier, power-amplifier and SPDT antenna switch for application in a 1.9 GHz DECT RF front-end are presented.
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.1997.647354