Piezoelectrically Transduced Temperature-Compensated Flexural-Mode Silicon Resonators

Piezoelectrically Transduced Temperature-Compensated Flexural-Mode Silicon Resonators

In this paper, we explore the piezoelectric transduction of in-plane flexural-mode silicon resonators with a center frequency in the range of 1.3-1.6 MHz. A novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation. These trenches are encapsulated...

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Veröffentlicht in:Journal of microelectromechanical systems 2013-06, Vol.22 (3), p.815-823
Hauptverfasser: Thakar, V. A., Zhengzheng Wu, Peczalski, A., Rais-Zadeh, M.
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mechanical instruments, equipment and techniques
Microelectromechanical systems (MEMS) resonators
Micromechanical devices and systems
oscillators
passive temperature compensation
Physics
piezoelectric resonators
power handling
Resonant frequency
Silicon
Strain
Temperature distribution
Temperature measurement
Timing
Tuning
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Beschreibung
Zusammenfassung:In this paper, we explore the piezoelectric transduction of in-plane flexural-mode silicon resonators with a center frequency in the range of 1.3-1.6 MHz. A novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation. These trenches are encapsulated within the silicon resonator body so as to protect them during the device release process. By using this method, we demonstrate a high-Q (> 19 000) resonator having a low temperature coefficient of frequency of
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2013.2245403