Numerical simulation of broad-area high-power semiconductor laser amplifiers

A comprehensive model is presented to study the electrical, thermal, and optical behavior of broad-area traveling-wave InGaAs-AlGaAs semiconductor amplifiers. Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal lensing a...

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Veröffentlicht in:	IEEE journal of quantum electronics 1997-12, Vol.33 (12), p.2240-2254
Hauptverfasser:	Zheng Dai, Michalzik, R., Unger, P., Ebeling, K.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Finite element methods Fundamental areas of phenomenology (including applications) Integrated optics Laser beams Laser modes Laser optical systems: design and operation Numerical simulation Optical propagation Optics Physics Resonators, cavities, amplifiers, arrays, and rings Semiconductor lasers Semiconductor optical amplifiers Stimulated emission Thermal lensing
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Beschreibung
Zusammenfassung:	A comprehensive model is presented to study the electrical, thermal, and optical behavior of broad-area traveling-wave InGaAs-AlGaAs semiconductor amplifiers. Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal lensing and optically induced nonlinearities. A self-consistent iteration is developed to simulate the beam filamentation in broad-area semiconductor amplifiers with residual facet reflectivities. The experimentally observed periodic filamentation with intensity minima close to zero is investigated numerically.
ISSN:	0018-9197 1558-1713
DOI:	10.1109/3.644107