Nonlinear modeling of SiGe HBTs up to 50 GHz

Nonlinear modeling of SiGe HBTs up to 50 GHz

A new large-signal model for SiGe heterostructure bipolar transistors (HBTs) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1997-12, Vol.45 (12), p.2503-2508
Hauptverfasser: Rheinfelder, C.N., Beisswanger, F.J., Heinrich, W.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Capacitance
Data mining
Equivalent circuits
Germanium silicon alloys
Heterojunction bipolar transistors
Leakage current
Microwave oscillators
MMICs
Silicon germanium
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Beschreibung
Zusammenfassung:A new large-signal model for SiGe heterostructure bipolar transistors (HBTs) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement data. The model yields excellent accuracy for dc and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design at 26 and 38 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.643866