GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500-750 GHz)

In this paper, we report on the development of a microstrip-to-waveguide transition for the WR-1.5 waveguide band (500-750 GHz). The microstrip lines and E-plane probes have been manufactured on 25 μm thick GaAs substrates. The transmission loss per single microstrip-to-waveguide transition is only...

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Hauptverfasser:	Hurm, V., Tessmann, A., Massler, H., Leuther, A., Riessle, M., Zink, M., Schlechtweg, M., Ambacher, O.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	E-plane probe transition Gallium arsenide Insertion loss Loss measurement metamorphic high electron mobility transistor (mHEMT) Microstrip MMICs submillimeter-wave monolithic integrated circuits (S-MMIC) Substrates Waveguide transitions waveguide-to-microstrip transition
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Beschreibung
Zusammenfassung:	In this paper, we report on the development of a microstrip-to-waveguide transition for the WR-1.5 waveguide band (500-750 GHz). The microstrip lines and E-plane probes have been manufactured on 25 μm thick GaAs substrates. The transmission loss per single microstrip-to-waveguide transition is only 1.0 dB @ 670 GHz. The measured return losses are better than 10 dB up to 720 GHz. The single transition includes a waveguide section with a length of 7.0 mm corresponding to the transitions which will be used in future submillimeter-wave MMIC modules.
ISSN:	2165-4727 2165-4743
DOI:	10.1109/APMC.2012.6421527