2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation

2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation

New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with di...

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Bibliographische Detailangaben
Hauptverfasser: Chvala, A., Donoval, D., Marek, J., Pribytny, P., Molnar, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Heating
Integrated circuit modeling
MOSFET circuits
Semiconductor device modeling
Thermal analysis
Thermal conductivity
Transistors
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Beschreibung
Zusammenfassung:New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.
DOI:10.1109/ASDAM.2012.6418573