High power, high efficiency E-band GaN amplifier MMICs

High power, high efficiency E-band GaN amplifier MMICs

An advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability. To the author's knowledge, these power amplifier designs demonstrate performance beyond previousl...

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Bibliographische Detailangaben
Hauptverfasser: Brown, A., Brown, K., Chen, J., Gritters, D., Hwang, K. C., Ko, E., Kolias, N., O'Connor, S., Sotelo, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium nitride
MMICs
Power amplifiers
Power generation
Power measurement
Semiconductor device measurement
Testing
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Beschreibung
Zusammenfassung:An advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability. To the author's knowledge, these power amplifier designs demonstrate performance beyond previously published results for E-band power amplifier MMICs.
DOI:10.1109/ICWITS.2012.6417777