Fabrication of CuGaO2 films by sol-gel method for UV detector application

Cu-based conductive oxide such as CuGaO 2 is promising for transparent p-type oxide material. In this work, the CuGaO 2 film has been fabricated using liquid-phase sol-gel method. The sol-gel derived CuGaO 2 films showed p-type conductivity, and high transparency with transmittance of about 80% in the visible light region. The energy gap for direct allowed transition was about 3.6 eV. Furthermore, we also investigated the potential application of CuGaO 2 films by measure the drain current in the dark and under a UV light illumination. Upon illumination with UV light, a significant increase in the drain current was observed which indicates that the charge carrier was excited when energy with more than energy gap was applied.