Combined Emission with simulation technique to resolve unstable failure mode sample

Failure analysis (FA) of semiconductor should base on a specific failure mode. But the failure mode has potential risk that it may change due to it is unstable (caused by weak defect or voltage stress etc). The change of unstable failure mode can occur in every stage of FA flow. If the change happen...

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Hauptverfasser: DiWei Fan, Wang, W., Li Tian, Miao Wu, ChunLei Wu
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Failure analysis (FA) of semiconductor should base on a specific failure mode. But the failure mode has potential risk that it may change due to it is unstable (caused by weak defect or voltage stress etc). The change of unstable failure mode can occur in every stage of FA flow. If the change happens, typical FA flow cannot be continued base on the failure mode any more. The change of unstable failure mode in different stage will impact the final FA result deeply. In this situation, combined failed device simulation with emission result is a good choice to resolve unstable failure mode sample. This paper introduces the solution that combined Emission technique with simulation to resolve the unstable failure mode sample.
DOI:10.1109/SMElec.2012.6417182