Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor

We have been developing monolithic active pixel sensors with 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revised chip (XRPIX1b) for soft X-rays used in frontsid...

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Veröffentlicht in:IEEE transactions on nuclear science 2013-02, Vol.60 (1), p.465-469
Hauptverfasser: Ryu, Syukyo Gando, Tsuru, T. G., Prigozhin, G., Kissel, S., Bautz, M., LaMarr, B., Nakashima, S., Foster, R. F., Takeda, A., Arai, Y., Imamura, T., Ohmoto, T., Iwata, A.
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Sprache:eng
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Zusammenfassung:We have been developing monolithic active pixel sensors with 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revised chip (XRPIX1b) for soft X-rays used in frontside illumination. The Al Kα line at 1.5 keV is successfully detected and energy resolution of 188 eV (FWHM) is achieved from a single pixel at this energy. The responsivity is improved to 6 μV/electron and the readout noise is 18 electrons rms. Data from 3 ×3 pixels irradiated with 6.4 keV (Fe Kα) X-rays demonstrates that the circuitry crosstalk between adjacent pixels is less than 0.5%.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2231880