Impact of back-gate bias on DC and RF characteristics in SiGe:C HBTs fabricated on thin-film SOI

Impact of back-gate bias on DC and RF characteristics in SiGe:C HBTs fabricated on thin-film SOI

The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in R C and hysteresis reduction, and further improves the maxim...

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Hauptverfasser: Jing Chen, Tao Yu, Jiexin Luo, Qingqing Wu, Zhan Chai, Xi Wang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Heterojunction bipolar transistors
Hysteresis
Integrated circuits
Radio frequency
Silicon germanium
Substrates
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Beschreibung
Zusammenfassung:The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in R C and hysteresis reduction, and further improves the maximum f T from 16 to 53GHz. Analytical relationships are developed to quantify the impact of substrate bias on electrical characteristics, which further approved by calibrated Sentaurus simulations.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2012.6404388