Design improvement of L-shaped tunneling field-effect transistors

Design improvement of L-shaped tunneling field-effect transistors

L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shap...

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Bibliographische Detailangaben
Hauptverfasser: Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Educational institutions
Logic gates
Photonic band gap
Silicon
steep slope
subthreshold swing
TFET
Transistors
Tunneling
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Beschreibung
Zusammenfassung:L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (I on ) and lower subthreshold swing (SS) than conventional L-shaped TFETs.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2012.6404373