Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures

Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures

The current-voltage (I-V) characteristics of Au/polyvinyl alcohol (PVA)/n-InP Schottky diode have been measured at temperature range 175-425 K. It is found that the series resistance (R S ) values of Au/PVA/n-InP Schottky diode estimated from Cheung's and Norde's methods, are strongly temp...

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Bibliographische Detailangaben
Hauptverfasser: Reddy, M. S. P., Hee-Sung Kang, Dong-Seok Kim, Young-Woo Jo, Chul-Ho Won, Ryun-Hwi Kim, Kyu-Il Jang, Chandrashekhar, C. H., Jung-Hee Lee, Reddy, V. R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Au/PVA/n-InP Schottky diode
barrier height
Gold
ideality factor
Resistance
Schottky barriers
Schottky diodes
series resistance
Temperature
Temperature dependence
Temperature measurement
thermionic emission
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Beschreibung
Zusammenfassung:The current-voltage (I-V) characteristics of Au/polyvinyl alcohol (PVA)/n-InP Schottky diode have been measured at temperature range 175-425 K. It is found that the series resistance (R S ) values of Au/PVA/n-InP Schottky diode estimated from Cheung's and Norde's methods, are strongly temperature dependent. The values of barrier height and R S have very different especially towards to the lower temperatures. This is attributed to non-ideal I-V characteristics of the MIS structure and non-pure thermionic emission (TE) mechanism due to the low temperature effects.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2012.6403321