SAW GaN/Si based resonators: Modeling and experimental validation

We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equiva...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Stefanescu, A., Muller, A., Konstantinidis, G., Buiculescu, V., Dinescu, A., Stavrinidis, A., Neculoiu, D., Cismaru, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	FEM modelling Finite element methods Gallium nitride GaN Integrated circuit modeling Resonant frequency Solid modeling Surface acoustic wave devices Surface acoustic wave resonator (SAW) Surface acoustic waves
Online-Zugang:	Volltext
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