SAW GaN/Si based resonators: Modeling and experimental validation

We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equiva...

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Bibliographische Detailangaben
Hauptverfasser:	Stefanescu, A., Muller, A., Konstantinidis, G., Buiculescu, V., Dinescu, A., Stavrinidis, A., Neculoiu, D., Cismaru, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	FEM modelling Finite element methods Gallium nitride GaN Integrated circuit modeling Resonant frequency Solid modeling Surface acoustic wave devices Surface acoustic wave resonator (SAW) Surface acoustic waves
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.
ISSN:	1545-827X 2377-0678
DOI:	10.1109/SMICND.2012.6400656