SAW GaN/Si based resonators: Modeling and experimental validation

We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equiva...

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Hauptverfasser: Stefanescu, A., Muller, A., Konstantinidis, G., Buiculescu, V., Dinescu, A., Stavrinidis, A., Neculoiu, D., Cismaru, A.
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creator Stefanescu, A.
Muller, A.
Konstantinidis, G.
Buiculescu, V.
Dinescu, A.
Stavrinidis, A.
Neculoiu, D.
Cismaru, A.
description We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.
doi_str_mv 10.1109/SMICND.2012.6400656
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects FEM modelling
Finite element methods
Gallium nitride
GaN
Integrated circuit modeling
Resonant frequency
Solid modeling
Surface acoustic wave devices
Surface acoustic wave resonator (SAW)
Surface acoustic waves
title SAW GaN/Si based resonators: Modeling and experimental validation
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