Assessment of Influence of Impedance Mismatch in ULSI Devices on Electromigration of Copper Interconnection Lines
In this work, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines on electromigration (EM) and Joule-heating failure mechanisms has been qualitatively studied. Signals corrupted by the impedance mismatch were experimentally measured within a 45-nm CMOS technolo...
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Veröffentlicht in: | IEEE transactions on device and materials reliability 2013-03, Vol.13 (1), p.231-235 |
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Hauptverfasser: | , , , |
Format: | Magazinearticle |
Sprache: | eng |
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Zusammenfassung: | In this work, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines on electromigration (EM) and Joule-heating failure mechanisms has been qualitatively studied. Signals corrupted by the impedance mismatch were experimentally measured within a 45-nm CMOS technology ULSI test chip. The signals' current waveforms were obtained using a SPICE simulator. These voltage and current waveforms have been taken as a basis for our calculations. The results reveal that distortions of current shape, which are caused by the mismatched output impedance of a CMOS driver, lead to substantial aggravation of the EM and Joule heating in a driven line. Furthermore, it was found that the impedance mismatch causes serious modifications of current shape of a CMOS inverter connected to the far end of the line. This in turn aggravates both EM and Joule heating in the next-stage line that loads this CMOS inverter. |
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ISSN: | 1530-4388 1558-2574 |
DOI: | 10.1109/TDMR.2012.2236556 |