Assessment of Influence of Impedance Mismatch in ULSI Devices on Electromigration of Copper Interconnection Lines

In this work, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines on electromigration (EM) and Joule-heating failure mechanisms has been qualitatively studied. Signals corrupted by the impedance mismatch were experimentally measured within a 45-nm CMOS technolo...

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Veröffentlicht in:IEEE transactions on device and materials reliability 2013-03, Vol.13 (1), p.231-235
Hauptverfasser: Livshits, P., Rysin, A., Sofer, S., Fefer, Y.
Format: Magazinearticle
Sprache:eng
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Zusammenfassung:In this work, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines on electromigration (EM) and Joule-heating failure mechanisms has been qualitatively studied. Signals corrupted by the impedance mismatch were experimentally measured within a 45-nm CMOS technology ULSI test chip. The signals' current waveforms were obtained using a SPICE simulator. These voltage and current waveforms have been taken as a basis for our calculations. The results reveal that distortions of current shape, which are caused by the mismatched output impedance of a CMOS driver, lead to substantial aggravation of the EM and Joule heating in a driven line. Furthermore, it was found that the impedance mismatch causes serious modifications of current shape of a CMOS inverter connected to the far end of the line. This in turn aggravates both EM and Joule heating in the next-stage line that loads this CMOS inverter.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2012.2236556