An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates
This paper provides a comprehensive analysis of electro-thermal behavior of the SiGe HBTs on SOI substrate based on two dimensional simulations. The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization...
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| creator | Shu-Hui Liao |
| description | This paper provides a comprehensive analysis of electro-thermal behavior of the SiGe HBTs on SOI substrate based on two dimensional simulations. The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. All the results are used for designing and optimizing SiGe HBTs on SOI devices performance. |
| doi_str_mv | 10.1109/GCCE.2012.6379664 |
| format | Conference Proceeding |
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The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. 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The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. All the results are used for designing and optimizing SiGe HBTs on SOI devices performance.</description><subject>Heterojunction bipolar transistors</subject><subject>Performance evaluation</subject><subject>self-heating effects</subject><subject>SiGe HBTs</subject><subject>Silicon germanium</subject><subject>Silicon on insulator technology</subject><subject>silicon-on-insulator</subject><subject>Substrates</subject><subject>Thermal resistance</subject><issn>2378-8143</issn><issn>2693-0854</issn><isbn>1467315001</isbn><isbn>9781467315005</isbn><isbn>1467314986</isbn><isbn>9781467314992</isbn><isbn>146731501X</isbn><isbn>9781467315012</isbn><isbn>9781467314985</isbn><isbn>1467314994</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMlqwzAURdUJmqb5gNKNfkDu02ANy9RkgkAWzj7I9lOiNnGCrRb69zU0XV0uh3MXl5AXDhnn4N4WRTHLBHCRaWmc1uqGPHGljeTKWX1LRkI7ycDm6u4f5AD8fgDSWGa5ko9k0vcfACByEE6LEfHTlq7ab-xT3PsUzy09B1riMbADDr3dUwwB60TDuaPtpaVlXCBdvm97OvdVF2ufsKGDlg6x_mQhHk-03Kxo-VX1qRtg_0wegj_2OLnmmGzns22xZOvNYlVM1yw6SKz2iLnmgavGAa9V7YL0GsA00jtlwAlT6UqKAMhdLhotrLVOGgREboWXY_L6NxsRcXfp4sl3P7vrU_IXMpxXTQ</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Shu-Hui Liao</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201210</creationdate><title>An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates</title><author>Shu-Hui Liao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-caee561f14d901c4c9f3a6007d3a9470927b6b32f0e1952d62888937e0ee182a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Heterojunction bipolar transistors</topic><topic>Performance evaluation</topic><topic>self-heating effects</topic><topic>SiGe HBTs</topic><topic>Silicon germanium</topic><topic>Silicon on insulator technology</topic><topic>silicon-on-insulator</topic><topic>Substrates</topic><topic>Thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Shu-Hui Liao</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shu-Hui Liao</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates</atitle><btitle>The 1st IEEE Global Conference on Consumer Electronics 2012</btitle><stitle>GCCE</stitle><date>2012-10</date><risdate>2012</risdate><spage>481</spage><epage>483</epage><pages>481-483</pages><issn>2378-8143</issn><eissn>2693-0854</eissn><isbn>1467315001</isbn><isbn>9781467315005</isbn><eisbn>1467314986</eisbn><eisbn>9781467314992</eisbn><eisbn>146731501X</eisbn><eisbn>9781467315012</eisbn><eisbn>9781467314985</eisbn><eisbn>1467314994</eisbn><abstract>This paper provides a comprehensive analysis of electro-thermal behavior of the SiGe HBTs on SOI substrate based on two dimensional simulations. The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. All the results are used for designing and optimizing SiGe HBTs on SOI devices performance.</abstract><pub>IEEE</pub><doi>10.1109/GCCE.2012.6379664</doi><tpages>3</tpages></addata></record> |
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| ispartof | The 1st IEEE Global Conference on Consumer Electronics 2012, 2012, p.481-483 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Heterojunction bipolar transistors Performance evaluation self-heating effects SiGe HBTs Silicon germanium Silicon on insulator technology silicon-on-insulator Substrates Thermal resistance |
| title | An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates |
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