An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates

This paper provides a comprehensive analysis of electro-thermal behavior of the SiGe HBTs on SOI substrate based on two dimensional simulations. The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. All the results are used for designing and optimizing SiGe HBTs on SOI devices performance.