Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2013-01, Vol.60 (1), p.92-96
Hauptverfasser:	Hsu-Yu Chang, Adams, B., Po-Yen Chien, Jiping Li, Woo, J. C. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Band-to-band tunneling CMOS Design. Technologies. Operation analysis. Testing Devices Electrical junctions Electronics Exact sciences and technology Integrated circuits Internet appliances Junctions laser annealing Laser beam annealing Logic gates Microelectronics MOSFETs Performance enhancement Reduction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon subthreshold swing (SS) Transistors tunnel field-effect transistor (TFET) Tunneling tunneling resistance Tunnels (transportation)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!