Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional...

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Veröffentlicht in:IEEE transactions on electron devices 2013-01, Vol.60 (1), p.92-96
Hauptverfasser: Hsu-Yu Chang, Adams, B., Po-Yen Chien, Jiping Li, Woo, J. C. S.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Band-to-band tunneling
CMOS
Design. Technologies. Operation analysis. Testing
Devices
Electrical junctions
Electronics
Exact sciences and technology
Integrated circuits
Internet appliances
Junctions
laser annealing
Laser beam annealing
Logic gates
Microelectronics
MOSFETs
Performance enhancement
Reduction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
subthreshold swing (SS)
Transistors
tunnel field-effect transistor (TFET)
Tunneling
tunneling resistance
Tunnels (transportation)
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Zusammenfassung:To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional MOSFETs. In order to improve the device performance of TFET, enhanced carrier transport across the tunneling junction is crucial. In this paper, source-pocket Si TFET is presented and successfully fabricated by laser annealing. This TFET has enhanced lateral electric field across the source tunneling junction, resulting in a reduction of tunneling distance. The experimental data of the proposed paper, for the first time, shows steep SS (46 mV/dec at 1 pA/μm), excellent I ON / I OFF ratio (
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2228006