Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing
To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional...
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| Veröffentlicht in: | IEEE transactions on electron devices 2013-01, Vol.60 (1), p.92-96 |
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| container_title | IEEE transactions on electron devices |
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| creator | Hsu-Yu Chang Adams, B. Po-Yen Chien Jiping Li Woo, J. C. S. |
| description | To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional MOSFETs. In order to improve the device performance of TFET, enhanced carrier transport across the tunneling junction is crucial. In this paper, source-pocket Si TFET is presented and successfully fabricated by laser annealing. This TFET has enhanced lateral electric field across the source tunneling junction, resulting in a reduction of tunneling distance. The experimental data of the proposed paper, for the first time, shows steep SS (46 mV/dec at 1 pA/μm), excellent I ON / I OFF ratio ( |
| doi_str_mv | 10.1109/TED.2012.2228006 |
| format | Article |
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The experimental data of the proposed paper, for the first time, shows steep SS (46 mV/dec at 1 pA/μm), excellent I ON / I OFF ratio ( <; 10 7 ), and improved output characteristics at T = 300 K due to the dramatic reduction of the tunneling resistance. Compared with other TFET works, the proposed method is efficient to improve the device performance on TFET.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2228006</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Band-to-band tunneling ; CMOS ; Design. Technologies. Operation analysis. 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(IEEE) Jan 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c420t-da4cf935e433f4fe01781cfc6f9f07fef6035bf91ea45f990df9b1bcb29598e93</citedby><cites>FETCH-LOGICAL-c420t-da4cf935e433f4fe01781cfc6f9f07fef6035bf91ea45f990df9b1bcb29598e93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6375799$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4009,27902,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6375799$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27077617$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hsu-Yu Chang</creatorcontrib><creatorcontrib>Adams, B.</creatorcontrib><creatorcontrib>Po-Yen Chien</creatorcontrib><creatorcontrib>Jiping Li</creatorcontrib><creatorcontrib>Woo, J. C. S.</creatorcontrib><title>Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional MOSFETs. In order to improve the device performance of TFET, enhanced carrier transport across the tunneling junction is crucial. In this paper, source-pocket Si TFET is presented and successfully fabricated by laser annealing. This TFET has enhanced lateral electric field across the source tunneling junction, resulting in a reduction of tunneling distance. The experimental data of the proposed paper, for the first time, shows steep SS (46 mV/dec at 1 pA/μm), excellent I ON / I OFF ratio ( <; 10 7 ), and improved output characteristics at T = 300 K due to the dramatic reduction of the tunneling resistance. Compared with other TFET works, the proposed method is efficient to improve the device performance on TFET.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Band-to-band tunneling</subject><subject>CMOS</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electrical junctions</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Internet appliances</subject><subject>Junctions</subject><subject>laser annealing</subject><subject>Laser beam annealing</subject><subject>Logic gates</subject><subject>Microelectronics</subject><subject>MOSFETs</subject><subject>Performance enhancement</subject><subject>Reduction</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>subthreshold swing (SS)</subject><subject>Transistors</subject><subject>tunnel field-effect transistor (TFET)</subject><subject>Tunneling</subject><subject>tunneling resistance</subject><subject>Tunnels (transportation)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc2LFDEQxYMoOK7eBS8BEbz0mO90jsPsqgsDK8x4Dul0xcna090maWH_ezPMsAdPRVG_96qKh9B7StaUEvPlcHe7ZoSyNWOsJUS9QCsqpW6MEuolWhFC28bwlr9Gb3J-rK0Sgq3Qcn-a0_QXerxfunJMkI_T0GM39vhhKfNS8PbokvMFUswl-oyngPfTkjw0Pyb_GwreR3xYxhEG_PXugLsnXI6AN_M8RO9KnMazYucyJLyplBvi-OstehXckOHdtd6gn1W7_d7sHr7dbze7xgtGStM74YPhEgTnQQQgVLfUB6-CCUQHCIpw2QVDwQkZjCF9MB3tfMeMNC0YfoM-X3zrj38WyMWeYvYwDG6EacmWciqVFES3Ff34H_pYvxzrdZayup9TZnSlyIXyaco5QbBziieXniwl9pyDrTnYcw72mkOVfLoau-zdEJIbfczPOqaJ1oqerT9cuAgAz2PFtdTG8H-iEZEk</recordid><startdate>201301</startdate><enddate>201301</enddate><creator>Hsu-Yu Chang</creator><creator>Adams, B.</creator><creator>Po-Yen Chien</creator><creator>Jiping Li</creator><creator>Woo, J. C. S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201301</creationdate><title>Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing</title><author>Hsu-Yu Chang ; Adams, B. ; Po-Yen Chien ; Jiping Li ; Woo, J. C. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-da4cf935e433f4fe01781cfc6f9f07fef6035bf91ea45f990df9b1bcb29598e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Band-to-band tunneling</topic><topic>CMOS</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Electrical junctions</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Internet appliances</topic><topic>Junctions</topic><topic>laser annealing</topic><topic>Laser beam annealing</topic><topic>Logic gates</topic><topic>Microelectronics</topic><topic>MOSFETs</topic><topic>Performance enhancement</topic><topic>Reduction</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>subthreshold swing (SS)</topic><topic>Transistors</topic><topic>tunnel field-effect transistor (TFET)</topic><topic>Tunneling</topic><topic>tunneling resistance</topic><topic>Tunnels (transportation)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu-Yu Chang</creatorcontrib><creatorcontrib>Adams, B.</creatorcontrib><creatorcontrib>Po-Yen Chien</creatorcontrib><creatorcontrib>Jiping Li</creatorcontrib><creatorcontrib>Woo, J. C. 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S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2013-01</date><risdate>2013</risdate><volume>60</volume><issue>1</issue><spage>92</spage><epage>96</epage><pages>92-96</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional MOSFETs. In order to improve the device performance of TFET, enhanced carrier transport across the tunneling junction is crucial. In this paper, source-pocket Si TFET is presented and successfully fabricated by laser annealing. This TFET has enhanced lateral electric field across the source tunneling junction, resulting in a reduction of tunneling distance. The experimental data of the proposed paper, for the first time, shows steep SS (46 mV/dec at 1 pA/μm), excellent I ON / I OFF ratio ( <; 10 7 ), and improved output characteristics at T = 300 K due to the dramatic reduction of the tunneling resistance. Compared with other TFET works, the proposed method is efficient to improve the device performance on TFET.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2228006</doi><tpages>5</tpages></addata></record> |
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| subjects | Annealing Applied sciences Band-to-band tunneling CMOS Design. Technologies. Operation analysis. Testing Devices Electrical junctions Electronics Exact sciences and technology Integrated circuits Internet appliances Junctions laser annealing Laser beam annealing Logic gates Microelectronics MOSFETs Performance enhancement Reduction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon subthreshold swing (SS) Transistors tunnel field-effect transistor (TFET) Tunneling tunneling resistance Tunnels (transportation) |
| title | Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing |
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