Manufacturing technology for high performance HBT linear power amplifiers

Manufacturing technology for high performance HBT linear power amplifiers

A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone...

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Hauptverfasser: Yang, L.W., Komiak, J.J., Smith, D.P., Kao, M.Y., Brozovich, R.S., Nordheden, K.J., Helms, D.R., Houston, D.E., Bardsley, F.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Fabrication
Heterojunction bipolar transistors
High power amplifiers
Linearity
Manufacturing processes
Microwave devices
MMICs
Power amplifiers
Power generation
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Beschreibung
Zusammenfassung:A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1994.636947