A 65 nm 32 b Subthreshold Processor With 9T Multi-Vt SRAM and Adaptive Supply Voltage Control

An energy-efficient SoC with 32 b subthreshold RISC processor cores, 32 kB conventional cache memory, and 9T ultra-low voltage (ULV) SRAM based on a flexible and extensible architecture was fabricated on a 2.7 mm 2 test chip in 65 nm low power CMOS. The processor cores are based on a custom standard cell library that was designed using a multiobjective approach to optimize noise margins, switching energy, and propagation delay simultaneously. The cores operate over a supply voltage range from 200 mV (best samples) to 1.2 V with clock frequencies from 10 kHz to 94 MHz at room temperature. The lowest energy consumption per cycle of 9.94 pJ is observed at 325 mV and 133 kHz. A 2 kb ULV SRAM macro achieves minimum energy per operation at averages of 321 mV (0.030 σ/μ), 567 fJ (0.037 σ/μ), and 730 kHz (0.184 σ/μ), for equal number of 32 b read/write operations. The off-chip performance and power management subsystem provides dynamic voltage and frequency scaling (DVFS) combined with an adaptive supply voltage generation for dynamic PVT compensation.