Short SiGe HBT electro-absorption modulator

Short SiGe HBT electro-absorption modulator

A SiGe HBT electro-absorption modulator with a device length of 69 μm is proposed. Calculations show that the modulator works at a speed of 25 GHz and can achieve a 10 dB extinction ratio.

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Bibliographische Detailangaben
Hauptverfasser: Pengfei Wu, Shengling Deng, Huang, Z. Rena
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electro-absorption modulator
Electrooptic modulators
Heterojunction bipolar transistors
optical interconnections
Optical switches
SiGe HBT
Silicon
Silicon germanium
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Beschreibung
Zusammenfassung:A SiGe HBT electro-absorption modulator with a device length of 69 μm is proposed. Calculations show that the modulator works at a speed of 25 GHz and can achieve a 10 dB extinction ratio.
ISSN:1092-8081
2766-1733
DOI:10.1109/IPCon.2012.6358602