CIGS solar cell absorber formed by rapid thermal processing

Cu(In, Ga)Se 2 thin film absorbers were fabricated applying 2-step heating process by IR-lamp furnace. Precursors prepared from Cu/Ga alloy and In target with sputtering process were deposited on Mo back contact layer. The characteristics of selenization on CIGS layer were characterized depending on the conditions of heating rates and holding time in several steps. The characterization of thin film properties were carried out by XRF, XRD, SEM, TEM, SIMS and Current density-voltage (J-V) measurements. The influence of IR-lamp furnace conditions on device performance was investigated. In this work, CIGS solar cells with a absorber composition of Cu(In 0.76 Ga 0.24 )Se 2 showed 13.56% of conversion efficiency.