HBT device robustness against process variations in millimeter-wave BiCMOS technology

Device electrical parameters and performance after optimization are often presented in literature. However, publications rarely address device stability versus process dispersion. Such a study was performed on the high-speed Si/SiGe heterojunction bipolar transistor (HS HBT) from a millimeter-wave B...

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Hauptverfasser:	Avenier, G., Chevalier, P., Montagne, A., Parmigiani, L., Berthier, L., Renault, O., Oghdayan, E., Mathieu, M., Campidelli, Y., Dutartre, D., Chantre, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits device physics device robustness Heterojunction bipolar transistors Performance evaluation Resistance Robustness semiconductor manufacturing Silicon bipolar/BiCMOS process technology Silicon germanium
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Beschreibung
Zusammenfassung:	Device electrical parameters and performance after optimization are often presented in literature. However, publications rarely address device stability versus process dispersion. Such a study was performed on the high-speed Si/SiGe heterojunction bipolar transistor (HS HBT) from a millimeter-wave BiCMOS technology. The process parameters were intentionally de-centered during the fabrication to monitor device electrical response and evaluate potential weaknesses or instability. This paper presents the results of this work and demonstrates the device robustness.
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BCTM.2012.6352652