Achieving temperature-insensitive λ in InP quantum dot lasers

Achieving temperature-insensitive λ in InP quantum dot lasers

By characterizing the temperature dependence of gain peak wavelength we designed Edge-emitting lasers to minimise the temperature dependence of the emission wavelength to as low as 0.03 nm/K, between 7 and 107°C (280-380 K).

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Bibliographische Detailangaben
Hauptverfasser: Shutts, S., Smowton, P. M., Krysa, A. B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cavity resonators
Measurement by laser beam
Photonic band gap
Quantum dot lasers
Temperature dependence
Temperature measurement
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Beschreibung
Zusammenfassung:By characterizing the temperature dependence of gain peak wavelength we designed Edge-emitting lasers to minimise the temperature dependence of the emission wavelength to as low as 0.03 nm/K, between 7 and 107°C (280-380 K).
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2012.6348343