The electrical properties of chemical vapor deposited silicon oxide films for applications as interlayer dielectrics in ULSI

The electrical properties of chemical vapor deposited silicon oxide films for applications as interlayer dielectrics in ULSI

The electrical properties of plasma-enhanced undoped silicon dioxide and subatmospheric pressure chemical vapor deposited borophosphosilicate glass films used in sub-half-micron ULSI were investigated and compared for 200 mm p-type silicon wafers. The capacitance-voltage (C-V), surface photo voltage...

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Bibliographische Detailangaben
Hauptverfasser: Loiko, K.V., Vassiliev, V.Y., Chee Tee Chua, Lim, D.H.Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance-voltage characteristics
Chemicals
Glass
Plasma chemistry
Plasma measurements
Plasma properties
Semiconductor films
Silicon compounds
Ultra large scale integration
Voltage
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Zusammenfassung:The electrical properties of plasma-enhanced undoped silicon dioxide and subatmospheric pressure chemical vapor deposited borophosphosilicate glass films used in sub-half-micron ULSI were investigated and compared for 200 mm p-type silicon wafers. The capacitance-voltage (C-V), surface photo voltage (SPV), and current-voltage (I-V) measurement methods were applied for characterization of the film properties. The revealed variation of the charge and current values across the wafer for as-deposited and densified films and its causes are discussed.
DOI:10.1109/CEIDP.1997.634581