Millimeter-Wave Power Sensor Based on Silicon Rod Waveguide

Millimeter-Wave Power Sensor Based on Silicon Rod Waveguide

This paper presents a novel type of RF power sensor, based on a metallic structure integrated into an mm-wave range dielectric rod waveguide made of Si. The metallic structure is employed as a bolometer. Numerical simulations of temperature distribution are shown. A prototype was tested at frequenci...

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Veröffentlicht in:IEEE transactions on terahertz science and technology 2012-11, Vol.2 (6), p.623-628
Hauptverfasser: Generalov, A. A., Lioubtchenko, D. V., Mallat, J. A., Ovchinnikov, V., Raisanen, A. V.
Format: Artikel
Sprache:eng
Schlagworte:
Bolometer
Bolometers
dielectric rod waveguide (DRW)
Electrical resistance measurement
millimeter (mm) waves
Millimeter wave devices
Power measurement
power sensor
Semiconductor device measurement
Silicon
THz
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Beschreibung
Zusammenfassung:This paper presents a novel type of RF power sensor, based on a metallic structure integrated into an mm-wave range dielectric rod waveguide made of Si. The metallic structure is employed as a bolometer. Numerical simulations of temperature distribution are shown. A prototype was tested at frequencies of 45 GHz-1 THz and a power levels from 0.1 to 500 mW. The power sensor showed the sensitivity of 0.51 Ω/mW resistance change.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2012.2223111