1200V SiC MOSFETS for high voltage power conversion

1200V SiC MOSFETS for high voltage power conversion

Recently, development and progress in information and telecommunications industry and service have gradually made significant increase in power consumption of Information and communication technology (ICT) equipment. To provide an energy-saving, floor space saving system solution for the data center...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Tao Wu, Jifeng Chen, Saijun Mao, Schutten, M. J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Insulated gate bipolar transistors
Logic gates
MOSFETs
Power conversion
Rectifiers
Silicon
Silicon carbide
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Beschreibung
Zusammenfassung:Recently, development and progress in information and telecommunications industry and service have gradually made significant increase in power consumption of Information and communication technology (ICT) equipment. To provide an energy-saving, floor space saving system solution for the data center or telecommunications, there exhibits a new trend moving towards high voltage power conversion. This paper presents a high voltage DC distribution power conversion using SiC MOSFET aiming at improving conversion efficiency. The characterization of SiC MOSFET is tested with double pulse and phase leg tests. A 5kW 380V DC rectifier is built and experimentally tested to compare the efficiency against the same prototype with Si device to demonstrate efficiency benefits.
ISSN:2329-3721
2329-3748
DOI:10.1109/ECCE.2012.6342523