Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules

Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules

High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm 2 SiC chips that are fabricated on 3" SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform sw...

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Hauptverfasser: Elasser, A., Agamy, M., Nasadoski, J., Bolotnikov, A., Stum, Z., Raju, R., Stevanovic, L., Mari, J., Menzel, M., Bastien, B., Losee, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar Degradation
Bipolar Diodes
Current Sharing
High Voltage
Insulated gate bipolar transistors
Leakage current
PiN
PIN photodiodes
Schottky diodes
Silicon
Silicon carbide
Switches
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Beschreibung
Zusammenfassung:High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm 2 SiC chips that are fabricated on 3" SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high voltage, high frequency applications, as well as antiparallel diodes for 6.5kV IGBTs, IGCTs, and IEGTs.
ISSN:2329-3721
2329-3748
DOI:10.1109/ECCE.2012.6342485