Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters

Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters

This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out...

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Hauptverfasser: Filsecker, F., Alvarez, R., Bernet, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Insulated gate bipolar transistors
Junctions
Semiconductor diodes
Silicon carbide
Switches
Temperature measurement
Voltage measurement
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Alvarez, R.
Bernet, S.
description This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out for currents between 50 and 1000 A. Different dc link voltages (2.4, 3.0 and 3.6 kV), junction temperatures (from -25 to 125°C) and di/dt values (0.9-2.2 kA/μs at 1 kA) were considered for the analysis. The effects and interactions of the different parameters in the device behavior are discussed.
doi_str_mv 10.1109/ECCE.2012.6342434
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subjects Insulated gate bipolar transistors
Junctions
Semiconductor diodes
Silicon carbide
Switches
Temperature measurement
Voltage measurement
title Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters
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